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IXTF6N200P3

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IXTF6N200P3

IXTF6N200P3

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Part No :

IXTF6N200P3

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 2000V 4A I4PAC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
116111 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
IXTF6N200P3 PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):2000 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:-
Power Dissipation (Max):215W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS i4-PAC™
Package / Case:ISOPLUSi5-Pak™
IXTF6N200P3 is available at GangBo-ic.com, Please review product page below for detailed information, including IXTF6N200P3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTF6N200P3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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