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NTBS9D0N10MC

NTBS9D0N10MC

MOSFET N-CH 100V 14A/60A TO263

3M 4949 0.5

3M 4949 0.5" X 0.75"-25

TAPE DBL COATED 1/2"X 3/4" 25/PK

NTBS9D0N10MC

NTBS9D0N10MC

Image is for reference, please contact us to get the real picture

Part No :

NTBS9D0N10MC

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 14A/60A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
78014400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:4V @ 131µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1695 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D2Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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