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NTBS9D0N10MC

NTBS9D0N10MC

MOSFET N-CH 100V 14A/60A TO263

NTBS9D0N10MC

NTBS9D0N10MC

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Part No :

NTBS9D0N10MC

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 14A/60A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
78014400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:4V @ 131µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1695 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D2Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTBS9D0N10MC is available at GangBo-ic.com, Please review product page below for detailed information, including NTBS9D0N10MC price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTBS9D0N10MC to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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