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NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

MOSFET N-CH 100V 35A/267A 8TDFNW

NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

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Part No :

NTMTSC1D6N10MCTXG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 35A/267A 8TDFNW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
346034 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7630 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5.1W (Ta), 291W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TDFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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