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NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

MOSFET N-CH 100V 35A/267A 8TDFNW

NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG

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Part No :

NTMTSC1D6N10MCTXG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 35A/267A 8TDFNW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
346034 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7630 pF @ 50 V
FET Feature:-
Power Dissipation (Max):5.1W (Ta), 291W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TDFNW (8.3x8.4)
Package / Case:8-PowerTDFN
NTMTSC1D6N10MCTXG is available at GangBo-ic.com, Please review product page below for detailed information, including NTMTSC1D6N10MCTXG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTMTSC1D6N10MCTXG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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