CRYSTAL 16.0000MHZ 16PF SMD
EFFECT TRANSISTOR, 0.9A I(D), 30
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPL60R115CFD7AUMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
2SK1567-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS5C442NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |
|
SPD1305NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1582(0)-T1B-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
FDMS86581Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A 8PQFN |
|
NTMFS6H852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 11A/42A 5DFN |
|
IPB031NE7N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB65R155CFD7ATMA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
2SJ302-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
NTHL019N65S3HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247-3 |
|
FDPF2D3N10CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 222A TO220F |
|
NVMFSC1D6N06CLSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 35A/224A 8DFN |