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BSM180C12P3C202

BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

BSM180C12P3C202

BSM180C12P3C202

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Part No :

BSM180C12P3C202

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1200V 180A MODULE
Catalog
Transistors - FETs, MOSFETs - Single
Availability
935993 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):880W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module
BSM180C12P3C202 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM180C12P3C202 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM180C12P3C202 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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