MOSFET N-CH 100V 45A/236A 8TDFNW
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta), 236A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 2mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 520µA |
Gate Charge (Qg) (Max) @ Vgs: | 89 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6305 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 9W (Ta), 255W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-TDFNW (8.3x8.4) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SPD15P10P GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMZ420UNYLNexperia |
MOSFET N-CH |
|
BSC882N03LS GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPC60R380E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
RFP2P08Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUZ355Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPI072N10N3 GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIPC26N50C3X1SA2IR (Infineon Technologies) |
TRANSISTOR N-CH |
|
SIL03N10-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 3A SOT23-6L |
|
BTS244ZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFH170N15X3Wickmann / Littelfuse |
MOSFET N-CH 150V 170A TO247 |
|
YJL2300A-F2-0000HF |
N-CH MOSFET 20V 4.5A SOT-23-3L |
|
NVMFS6H818NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 22A/135A 5DFN |