MOSFET P-CH 20V 2A WSSMINI6-F1
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8 V, 4V |
Rds On (Max) @ Id, Vgs: | 120mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: | 1.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 300 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 540mW (Ta) |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | WSSMini6-F1 |
Package / Case: | 6-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPL60R060CFD7AUMA1IR (Infineon Technologies) |
MOSFET N CH |
|
TK31Z60X,S1FToshiba Electronic Devices and Storage Corporation |
X35 PB-F POWER MOSFET TRANSISTOR |
|
PMPB25ENEA115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
MAX8585EUARochester Electronics |
MAX8585 ORING MOSFET CONTROLLER |
|
IPB0401NM5SATMA1IR (Infineon Technologies) |
TRENCH >=100V |
|
IRFP362Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ208-T1-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDBL9401-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 58.4/240A 8HPSOF |
|
5HN01C-TB-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SMD |
|
FS100KMJ-03F#B00Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPB65R099CFD7AATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 24A TO263-3 |
|
CPH6350-P-TL-ERochester Electronics |
MOSFET P-CH 30V 6A CPH6 |
|
SIHA11N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 8A TO220 |