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IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1

MOSFET N-CH 650V 24A TO263-3

IPB65R099CFD7AATMA1

IPB65R099CFD7AATMA1

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Part No :

IPB65R099CFD7AATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 24A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:Automotive, AEC-Q101, CoolMOS™ CFD7A
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2513 pF @ 400 V
FET Feature:-
Power Dissipation (Max):127W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R099CFD7AATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB65R099CFD7AATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB65R099CFD7AATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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