SMALL SIGNAL N-CHANNEL MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UPA2350T1G(1)-E4-ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A IPAK |
|
MSC035SMA170BRoving Networks / Microchip Technology |
TRANS SJT 1700V TO247 |
|
RD3S100AAFRATLROHM Semiconductor |
MOSFET N-CH 190V 10A TO252 |
|
AON6380Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24V 8DFN |
|
IPC60R190E6X1SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
IPP100N18N3GXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU6N60DM2STMicroelectronics |
MOSFET N-CH 600V 5A IPAK |
|
RFG75N05ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
EFC4611-TRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS4C10NAT1GRochester Electronics |
MOSFET N-CH 30V 8.2A SO8FL |
|
DMN10H220LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.6A SOT23-3 |
|
2SK3480-S12-AZRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |