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STU6N60DM2

STU6N60DM2

MOSFET N-CH 600V 5A IPAK

STU6N60DM2

STU6N60DM2

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Part No :

STU6N60DM2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 5A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
175917 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
Type Description
Series:MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:274 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
STU6N60DM2 is available at GangBo-ic.com, Please review product page below for detailed information, including STU6N60DM2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STU6N60DM2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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