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IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

IAUC120N04S6N006ATMA1

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Part No :

IAUC120N04S6N006ATMA1

Manufacturer
IR (Infineon Technologies)
Description
IAUC120N04S6N006ATMA1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
765876 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tj)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:600µOhm @ 60A, 10V
Vgs(th) (Max) @ Id:3V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:151 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10117 pF @ 25 V
FET Feature:-
Power Dissipation (Max):187W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-53
Package / Case:8-PowerTDFN
IAUC120N04S6N006ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUC120N04S6N006ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUC120N04S6N006ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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