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IPB108N15N3G

IPB108N15N3G

IPB108N15 - 12V-300V N-CHANNEL P

IPB108N15N3G

IPB108N15N3G

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Part No :

IPB108N15N3G

Manufacturer
Rochester Electronics
Description
IPB108N15 - 12V-300V N-CHANNEL P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
815881 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
IPB108N15N3G is available at GangBo-ic.com, Please review product page below for detailed information, including IPB108N15N3G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB108N15N3G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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