Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTTFS1D2N02P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 23A/180A 8PQFN |
|
PCF6680ASSanyo Semiconductor/ON Semiconductor |
DIE TRANS MOSFET N-CH 30V |
|
G3R40MT12KGeneSiC Semiconductor |
SIC MOSFET N-CH 71A TO247-4 |
|
6HN04MH-TL-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK3635-Z-AZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFP8N18LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFR220Rochester Electronics |
MOSFET N-CH 200V 4.6A TO252AA |
|
NVH4L060N090SC1Sanyo Semiconductor/ON Semiconductor |
- |
|
IPI60R199CPXKSA2IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
PSMN7R5-30YLD115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXFL60N80PWickmann / Littelfuse |
MOSFET N-CH 800V 40A ISOPLUS264 |
|
DMN2004WKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 540MA SOT323 |
|
YJG53G06A-F1-0100HF |
N-CH MOSFET 60V 53A PDFN5060-8L- |