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NTTFS1D2N02P1E

NTTFS1D2N02P1E

MOSFET N-CH 25V 23A/180A 8PQFN

NTTFS1D2N02P1E

NTTFS1D2N02P1E

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Part No :

NTTFS1D2N02P1E

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 25V 23A/180A 8PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
197138000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:2V @ 934µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:4040 pF @ 13 V
FET Feature:-
Power Dissipation (Max):820mW (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (3.3x3.3)
Package / Case:8-PowerWDFN
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