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SCT30N120D2

SCT30N120D2

SICFET N-CH 1200V 40A HIP247

SCT30N120D2

SCT30N120D2

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Part No :

SCT30N120D2

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 40A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
905790 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 400 V
FET Feature:-
Power Dissipation (Max):270W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
SCT30N120D2 is available at GangBo-ic.com, Please review product page below for detailed information, including SCT30N120D2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SCT30N120D2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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