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FCMT080N65S3

FCMT080N65S3

MOSFET N-CH 650V 38A 4TDFN

FCMT080N65S3

FCMT080N65S3

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Part No :

FCMT080N65S3

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 650V 38A 4TDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
915791 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:SuperFET® III
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:4.5V @ 880µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2765 pF @ 400 V
FET Feature:-
Power Dissipation (Max):260W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-TDFN (8x8)
Package / Case:4-PowerTSFN
FCMT080N65S3 is available at GangBo-ic.com, Please review product page below for detailed information, including FCMT080N65S3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCMT080N65S3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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