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STU7N60DM2

STU7N60DM2

MOSFET N-CH 600V 6A IPAK

89-CBSA-2.75X5.0X0.8

89-CBSA-2.75X5.0X0.8

RF SHIELD 2.75" X 5" T/H

STU7N60DM2

STU7N60DM2

Image is for reference, please contact us to get the real picture

Part No :

STU7N60DM2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 6A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
195719 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:MDmesh™ DM2
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:324 pF @ 100 V
FET Feature:-
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
STU7N60DM2 is available at GangBo-ic.com, Please review product page below for detailed information, including STU7N60DM2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STU7N60DM2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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