MOSFET P-CH 30V 2.6A SC70-3
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 100mOhm @ 2.6A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 320 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-70-3 |
Package / Case: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NVMFS6H858NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.7A/30A 5DFN |
|
UPA1556AH-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK0397DPA-02#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
2SJ166(1)-T1B-ARochester Electronics |
P-CHANNEL, MOSFET |
|
IPA023N04NM3SXKSA1IR (Infineon Technologies) |
TRENCH <= 40V |
|
RJK03D2DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY64N055T-TRLWickmann / Littelfuse |
MOSFET N-CH 55V 64A TO252 |
|
RJK03E0DNS-00#J5Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IST007N04NM6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 54A/440A HSOF-5 |
|
NTMJS0D9N04CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 8LFPAK |
|
UPA2463T1Q-E1-AXRochester Electronics |
MOSFET N-CH 20V 6A 8HUSON |
|
SCTL35N65G2VSTMicroelectronics |
TRANS SJT N-CH 650V PWRFLAT HV |
|
2SJ257-ERochester Electronics |
P-CHANNEL POWER MOSFET |