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FDM606P

FDM606P

MOSFET P-CH 20V 6.8A 8MLP

FDM606P

FDM606P

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Part No :

FDM606P

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 6.8A 8MLP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19587 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
PDF
FDM606P PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2.2 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.92W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP, MicroFET (3x2)
Package / Case:8-SMD, Flat Lead Exposed Pad
FDM606P is available at GangBo-ic.com, Please review product page below for detailed information, including FDM606P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDM606P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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