MOSFET N-CH 40V 130A PPAK SO-8
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® Gen IV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.6mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1960 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 148W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
ECH8304-TL-ERochester Electronics |
MOSFET P-CH 12V 9.5A 8ECH |
|
RF1S50N06LERochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ598-AYRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
NTMFS016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10A/33A 5DFN |
|
UF3C065030T3SUnitedSiC |
MOSFET N-CH 650V 85A TO220-3 |
|
UPA2806T1L-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMTSC1D5N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 33A/287A 8DFNW |
|
MCB60I1200TZ-TUBWickmann / Littelfuse |
SICFET N-CH 1.2KV 90A TO268AA |
|
NTBLS001N06CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 51A/422A 8HPSOF |
|
IPC302N15N3X7SA1IR (Infineon Technologies) |
MV POWER MOS |
|
IXFH60N65X2-4Wickmann / Littelfuse |
MOSFET N-CH 650V 60A TO247-4L |
|
IPD036N04LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A TO252-31 |
|
RFP8P06LERochester Electronics |
P-CHANNEL POWER MOSFET |