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SiT3372AC-1B9-28NE133.516483T

SiT3372AC-1B9-28NE133.516483T

XTAL OSC VCXO 133.516483MHZ

1181 1/8 X 18 YDS

1181 1/8 X 18 YDS

RF EMI SHLDING TAPE 54'X0.125"

NVMJS0D8N04CLTWG

NVMJS0D8N04CLTWG

MOSFET N-CH 40V 56A/368A 8LFPAK

NVMJS0D8N04CLTWG

NVMJS0D8N04CLTWG

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Part No :

NVMJS0D8N04CLTWG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 40V 56A/368A 8LFPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
465146 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:56A (Ta), 368A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:720µOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:162 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9600 pF @ 25 V
FET Feature:-
Power Dissipation (Max):4.2W (Ta), 180W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-LFPAK
Package / Case:SOT-1205, 8-LFPAK56
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