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IRFHM8342TRPBF-IR

IRFHM8342TRPBF-IR

MOSFET N-CH 30V 10A/28A 8PQFN DL

IRFHM8342TRPBF-IR

IRFHM8342TRPBF-IR

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Part No :

IRFHM8342TRPBF-IR

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 10A/28A 8PQFN DL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
535153 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:16mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.6W (Ta), 20W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN-Dual (3.3x3.3), Power33
Package / Case:8-PowerVDFN
IRFHM8342TRPBF-IR is available at GangBo-ic.com, Please review product page below for detailed information, including IRFHM8342TRPBF-IR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFHM8342TRPBF-IR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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