MOSFET N-CH 40V 75A PPAK SO-8
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchFET® Gen IV |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 75W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMJ65H650SCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 650V 10A ITO220AB |
|
RSQ030N08HZGTRROHM Semiconductor |
MOSFET N-CH 80V 3A TSMT6 |
|
RJJ0621DPP-00#T2Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
SIDR220DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 87.7A/100A PPAK |
|
SQJ431EP-T2_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
SQ3495EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 8A 6TSOP |
|
SQ3418AEEV-T1_GE3Vishay / Siliconix |
MOSFET N-CHANNEL 30V 7.8A 6TSOP |
|
STB75N06HDT4Rochester Electronics |
NFET D2PAK SPCL 60V TR |
|
ZVN4424GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V SOT223 T&R |
|
2SK2617ALSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
STD5NM50AGSTMicroelectronics |
MOSFET N-CH 500V 7.5A DPAK |
|
DMN90H8D5HCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 900V 2.5A ITO220AB |
|
TSM70N600ACL X0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 8A TO262S |