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SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

MOSFET N-CH 25V 87.7A/100A PPAK

SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

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Part No :

SIDR220DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 87.7A/100A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
255125 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 18 - Nov 22 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:87.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:1085 pF @ 10 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8DC
Package / Case:PowerPAK® SO-8
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