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SIHU2N80AE-GE3

SIHU2N80AE-GE3

MOSFET N-CH 800V 2.9A TO251AA

SIHU2N80AE-GE3

SIHU2N80AE-GE3

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Part No :

SIHU2N80AE-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 2.9A TO251AA
Catalog
Transistors - FETs, MOSFETs - Single
Availability
095109 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:180 pF @ 100 V
FET Feature:-
Power Dissipation (Max):62.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
SIHU2N80AE-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHU2N80AE-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHU2N80AE-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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