TRANS SJT N-CH 1200V 31A TO247-3
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Rds On (Max) @ Id, Vgs: | 110mOhm @ 20A, 20V |
Vgs(th) (Max) @ Id: | 4.3V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 56 nC @ 20 V |
Vgs (Max): | +25, -15V |
Input Capacitance (Ciss) (Max) @ Vds: | 1670 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 178W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NVBLS4D0N15MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 19A/187A 8HPSOF |
![]() |
MTV32N25ERochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IXTT96N20P-TRLWickmann / Littelfuse |
MOSFET N-CH 200V 96A TO268 |
![]() |
SQR97N06-6M3L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO252 |
![]() |
RJK0364DPA-WS#J0Rochester Electronics |
POWER TRANSISTOR, MOSFET |
![]() |
BTS247ZE3062AATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SIHU2N80AE-GE3Vishay / Siliconix |
MOSFET N-CH 800V 2.9A TO251AA |
![]() |
FDR836PRochester Electronics |
P-CHANNEL MOSFET |
![]() |
MSC015SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 140A TO247-4 |
![]() |
2SK669KRochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
![]() |
2SJ557(0)T1B-ATRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
![]() |
IXTT140N075L2HVWickmann / Littelfuse |
MOSFET N-CH 75V 140A TO268HV |
![]() |
2SK1318-ERochester Electronics |
N-CHANNEL POWER MOSFET |