N-CHANNL SILICON MOSFET FOR ULTR
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 20mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 13 nC @ 4.5 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-CPH |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SJ216-ERochester Electronics |
P-CHANNEL SMALL SIGNAL MOSFET |
|
2SJ576APTL-ERochester Electronics |
P-CHANNEL MOSFET |
|
YJB200G06B-F2-0000HF |
N-CH MOSFET 60V 200A TO-263 |
|
IRFU422Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APTM120DA30T1GRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 31A SP1 |
|
PMXB75UPE/M5147Rochester Electronics |
P-CHANNEL MOSFET |
|
RFD8P05SM9ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
EFC4615R-TRRochester Electronics |
MOSFET N-CH 24V 6A EFCP |
|
RJK03B9DPA-WS#J53Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RJK5012DPP-K0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP80N03S2L05Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
XPN7R104NC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 20A 8TSON |
|
2SK2415-AYRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |