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APTM120DA30T1G

APTM120DA30T1G

MOSFET N-CH 1200V 31A SP1

APTM120DA30T1G

APTM120DA30T1G

Image is for reference, please contact us to get the real picture

Part No :

APTM120DA30T1G

Manufacturer
Roving Networks / Microchip Technology
Description
MOSFET N-CH 1200V 31A SP1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
425042 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 10 - Apr 14 2025
PDF
APTM120DA30T1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:560 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14560 pF @ 25 V
FET Feature:-
Power Dissipation (Max):657W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SP1
Package / Case:SP1
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