N-CHANNEL POWER MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQJ140EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 40V 266A PPAK SO-8 |
|
PMN30XPAXNexperia |
MOSFET P-CH 20V 5.2A 6TSOP |
|
BUK6217-55CRochester Electronics |
PFET, 44A I(D), 55V, 0.0285OHM, |
|
PH4030DLV115Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
PMXB56EN147Rochester Electronics |
SMALL SIGNAL FET |
|
AUIRF3808Rochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
AUIRFS4010-7TRLRochester Electronics |
MOSFET N-CH 100V 180A TO263 |
|
IMZA65R107M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
3N206Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NX2020P1115Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
NVTFWS002N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 27A/136A 8WDFN |
|
IPZA65R018CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
BSC883N03LS GRochester Electronics |
N-CHANNEL POWER MOSFET |