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IPZA65R018CFD7XKSA1

IPZA65R018CFD7XKSA1

HIGH POWER_NEW

IPZA65R018CFD7XKSA1

IPZA65R018CFD7XKSA1

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Part No :

IPZA65R018CFD7XKSA1

Manufacturer
IR (Infineon Technologies)
Description
HIGH POWER_NEW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
494549 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:CoolMOS™ CFD7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs:234 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11660 pF @ 400 V
FET Feature:-
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4-3
Package / Case:TO-247-4
IPZA65R018CFD7XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPZA65R018CFD7XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPZA65R018CFD7XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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