SMALL SIGNAL N-CHANNEL MOSFET
Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Active |
FET Type: | - |
Technology: | - |
Drain to Source Voltage (Vdss): | - |
Current - Continuous Drain (Id) @ 25°C: | - |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | - |
Supplier Device Package: | - |
Package / Case: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTB004N10GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 201A TO263 |
![]() |
BUZ331Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BSF134N10NJ3GRochester Electronics |
BSF134N10 - 12V-300V N-CHANNEL P |
![]() |
SIDR104ADP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.8A/81A PPAK |
![]() |
2SJ278MYTRRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
NP22N055ILE-E1-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
FDP2710_SW82258Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
2SJ358(0)-T1-AYRochester Electronics |
P-CHANNEL POWER MOSFET |
![]() |
DMJ65H190SCTIZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 501V-650V ITO-220A |
![]() |
BUZ73AH3046Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
H7N0608LS90TLRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
TK60S10N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 60A DPAK |
![]() |
NTMTS001N06CLTXGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 398.2A |