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NTB004N10G

NTB004N10G

MOSFET N-CH 100V 201A TO263

NTB004N10G

NTB004N10G

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Part No :

NTB004N10G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 201A TO263
Catalog
Transistors - FETs, MOSFETs - Single
Availability
654465 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 05 - Mar 09 2025
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:201A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:175 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11900 pF @ 50 V
FET Feature:-
Power Dissipation (Max):340W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D2Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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