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IPC022N03L3X1SA1

IPC022N03L3X1SA1

MOSFET N-CH 30V 1A SAWN ON FOIL

IPC022N03L3X1SA1

IPC022N03L3X1SA1

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Part No :

IPC022N03L3X1SA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 30V 1A SAWN ON FOIL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12792 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 03 - Mar 07 2025
PDF
IPC022N03L3X1SA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:Sawn on foil
Package / Case:Die
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