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IPB65R090CFD7ATMA1

IPB65R090CFD7ATMA1

HIGH POWER_NEW

IPB65R090CFD7ATMA1

IPB65R090CFD7ATMA1

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Part No :

IPB65R090CFD7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
HIGH POWER_NEW
Catalog
Transistors - FETs, MOSFETs - Single
Availability
604360 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 03 - Mar 07 2025
Type Description
Series:CoolMOS™ CFD7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2513 pF @ 400 V
FET Feature:-
Power Dissipation (Max):127W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R090CFD7ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB65R090CFD7ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB65R090CFD7ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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