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SIA430DJT-T1-GE3

SIA430DJT-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

SIA430DJT-T1-GE3

SIA430DJT-T1-GE3

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Part No :

SIA430DJT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 12A PPAK SC70-6
Catalog
Transistors - FETs, MOSFETs - Single
Availability
364336 pieces
Shipped from
HK warehouse
Expected Shipping Date
Mar 02 - Mar 06 2025
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
FET Feature:-
Power Dissipation (Max):19.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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