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2N6849

2N6849

MOSFET P-CH 100V 6.5A TO39

2N6849

2N6849

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Part No :

2N6849

Manufacturer
Microsemi
Description
MOSFET P-CH 100V 6.5A TO39
Catalog
Transistors - FETs, MOSFETs - Single
Availability
437943 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
2N6849 PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
2N6849 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6849 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6849 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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