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SI5857DU-T1-GE3

SI5857DU-T1-GE3

MOSFET P-CH 20V 6A PPAK CHIPFET

SI5857DU-T1-GE3

SI5857DU-T1-GE3

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Part No :

SI5857DU-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 20V 6A PPAK CHIPFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
567956 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
SI5857DU-T1-GE3 PDF
Type Description
Series:LITTLE FOOT®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Power Dissipation (Max):2.3W (Ta), 10.4W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® ChipFet Dual
Package / Case:PowerPAK® ChipFET™ Dual
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