MOSFET N-CH 900V 12A TO247
EMI FILTER, 300VDC, 6A, FLEX WIR
Type | Description |
---|---|
Series: | MegaMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 170 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 (IXTH) |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
IRF614SVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
![]() |
STB5NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 4.4A I2PAK |
![]() |
SIE800DF-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 50A 10POLARPAK |
![]() |
TPC6104(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A VS-6 |
![]() |
2N6849Microsemi |
MOSFET P-CH 100V 6.5A TO39 |
![]() |
64-4051IR (Infineon Technologies) |
MOSFET N-CH 55V 16A DPAK |
![]() |
SIHW47N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 47A TO247AD |
![]() |
IRLR7821CTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 65A DPAK |
![]() |
STB24NM65NSTMicroelectronics |
MOSFET N-CH 650V 19A D2PAK |
![]() |
FQD4N20LTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.2A DPAK |
![]() |
2SK2315TYTR-ERenesas Electronics America |
MOSFET N-CH 60V 2A UPAK |
![]() |
64-4059PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 42A DPAK |
![]() |
NTMFD4C50NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12A 8DFN DL |