MOSFET N-CH 12V 5.7A 6TSOP
M55342H 50PPM 0505 121 1% R WS
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12 V |
Current - Continuous Drain (Id) @ 25°C: | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 34mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 10.1 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 740 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.75W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SC-74, SOT-457 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BSF050N03LQ3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 15A/60A 2WDSON |
![]() |
APT10M11B2VFRGMicrosemi |
MOSFET N-CH 100V 100A T-MAX |
![]() |
IPU10N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO251-3 |
![]() |
STB25NM60N-1STMicroelectronics |
MOSFET N-CH 600V 21A I2PAK |
![]() |
FDPF8N50NZTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 8A TO220F |
![]() |
IRLI2910PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 31A TO220AB FP |
![]() |
IRF6633ATRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
![]() |
AOL1458Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14A/46A ULTRASO8 |
![]() |
IRL530ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 14A TO220-3 |
![]() |
NVMFS5C612NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
![]() |
NDP4050Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 15A TO220-3 |
![]() |
ZVP2120GTCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 200V 200MA SOT223 |
![]() |
FQPF9N15Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 6.9A TO220F |