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STB25NM60N-1

STB25NM60N-1

Image is for reference, please contact us to get the real picture

Part No :

STB25NM60N-1

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 21A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
177617 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2025
PDF
STB25NM60N-1 PDF
Type Description
Series:MDmesh™ II
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:-
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
STB25NM60N-1 is available at GangBo-ic.com, Please review product page below for detailed information, including STB25NM60N-1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB25NM60N-1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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