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2SJ438,Q(M

2SJ438,Q(M

MOSFET P-CH TO220NIS

2SJ438,Q(M

2SJ438,Q(M

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Part No :

2SJ438,Q(M

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET P-CH TO220NIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
687368 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
2SJ438,Q(M PDF
Type Description
Series:*
Package:Bulk
Part Status:Obsolete
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:TO-220NIS
Package / Case:TO-220-3 Full Pack
2SJ438,Q(M is available at GangBo-ic.com, Please review product page below for detailed information, including 2SJ438,Q(M price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2SJ438,Q(M to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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