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FQPF10N60CT

FQPF10N60CT

MOSFET N-CH 600V 9.5A TO220F

500MXG180MEFCSN35X30

500MXG180MEFCSN35X30

CAP ALUM 180UF 20% 500V SNAP

FQPF10N60CT

FQPF10N60CT

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Part No :

FQPF10N60CT

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 600V 9.5A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
797379 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
FQPF10N60CT PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:730mOhm @ 4.75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF10N60CT is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF10N60CT price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF10N60CT to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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