







XTAL OSC VCXO 644.53125MHZ LVDS
IC DRAM 512MBIT PARALLEL 60TFBGA
PREMIERWAVE 2050 256MB FLASH
MOSFET P-CH 8V 3A SOT23-3
| Type | Description |
|---|---|
| Series: | TrenchFET® |
| Package: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 8 V |
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 45mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id: | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 4.5 V |
| Vgs (Max): | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds: | 970 pF @ 4 V |
| FET Feature: | - |
| Power Dissipation (Max): | 710mW (Ta) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-23-3 |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
BSS119E6327IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
|
BUK75150-55A,127NXP Semiconductors |
MOSFET N-CH 55V 11A TO220AB |
|
|
2SJ438,Q(MToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH TO220NIS |
|
|
IPD65R380E6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO252-3 |
|
|
IRFS4510PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 61A D2PAK |
|
|
STD80N6F6STMicroelectronics |
MOSFET N-CH 60V 80A DPAK |
|
|
SI7100DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 8V 35A PPAK1212-8 |
|
|
STI14NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A I2PAK |
|
|
PSMN7R0-40LS,115NXP Semiconductors |
MOSFET N-CH 40V 40A 8DFN |
|
|
SPD04N60C3BTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 4.5A TO252-3 |
|
|
MTP2955VSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A TO220AB |
|
|
IRLR7843CPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 161A DPAK |
|
|
IRL2203NLIR (Infineon Technologies) |
MOSFET N-CH 30V 116A TO262 |