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SIE816DF-T1-GE3

SIE816DF-T1-GE3

MOSFET N-CH 60V 60A 10POLARPAK

SIE816DF-T1-GE3

SIE816DF-T1-GE3

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Part No :

SIE816DF-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 60A 10POLARPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
797279 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SIE816DF-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.4mOhm @ 19.8A, 10V
Vgs(th) (Max) @ Id:4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3100 pF @ 30 V
FET Feature:-
Power Dissipation (Max):5.2W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PolarPAK® (L)
Package / Case:10-PolarPAK® (L)
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