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IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

MOSFET N-CH 650V 3.9A TO252-3

IPD65R950CFDBTMA1

IPD65R950CFDBTMA1

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Part No :

IPD65R950CFDBTMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 3.9A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
897289 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD65R950CFDBTMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:14.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 100 V
FET Feature:-
Power Dissipation (Max):36.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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