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BTS282Z E3230

BTS282Z E3230

MOSFET N-CH 49V 80A TO220-7

USBBFTV7S2G10OPEN

USBBFTV7S2G10OPEN

RECEPT 1.0M CORDSET OPEN GREEN

BTS282Z E3230

BTS282Z E3230

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Part No :

BTS282Z E3230

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 49V 80A TO220-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
467246 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
BTS282Z E3230 PDF
Type Description
Series:TEMPFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):49 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id:2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs:232 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:Temperature Sensing Diode
Power Dissipation (Max):300W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:P-TO220-7-230
Package / Case:TO-220-7
BTS282Z E3230 is available at GangBo-ic.com, Please review product page below for detailed information, including BTS282Z E3230 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BTS282Z E3230 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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