MOSFET N-CH 150V 3.6A 8SO
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 150 V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 90mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 41 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 990 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
2SJ661-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 38A SMP-FD |
![]() |
SI5406CDC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 12V 6A 1206-8 |
![]() |
SI4384DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 10A 8SO |
![]() |
NTD65N03R-035Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 9.5A/32A IPAK |
![]() |
NTD60N02RT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 8.5A/32A DPAK |
![]() |
IRFBC40LCSVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
![]() |
IRFR3711ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 93A DPAK |
![]() |
SIA444DJT-T4-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A/12A PPAK |
![]() |
NTMFS4825NFET3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/171A 5DFN |
![]() |
IRLR8503TRIR (Infineon Technologies) |
MOSFET N-CH 30V 44A DPAK |
![]() |
HUFA75639S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK |
![]() |
IXFC26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 15A ISOPLUS220 |
![]() |
APT10M11JVRMicrosemi |
MOSFET N-CH 100V 144A ISOTOP |