MOSFET N-CH 55V 35A TO220-5-62
Type | Description |
---|---|
Series: | TEMPFET® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55 V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: | 130 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2660 pF @ 25 V |
FET Feature: | Temperature Sensing Diode |
Power Dissipation (Max): | 170W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO220-5-62 |
Package / Case: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF840LCSVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
SI2372DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4A/5.3A SOT23-3 |
|
IPB80N06S2L-H5IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
MTD6P10ESanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 6A DPAK |
|
FDI9406-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 110A I2PAK |
|
STF11N65K3STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
IRFPC50Vishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
STD22NF06AGSTMicroelectronics |
MOSFET N-CH 60V 23A DPAK |
|
PMZ270XN,315Nexperia |
MOSFET N-CH 20V 2.15A DFN1006-3 |
|
SPB160N04S2L03DTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
|
PMN50XP,165NXP Semiconductors |
MOSFET P-CH 20V 4.8A 6TSOP |
|
SUM09N20-270-E3Vishay / Siliconix |
MOSFET N-CH 200V 9A TO263 |
|
IPI08CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 95A TO262-3 |