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MTD6P10E

MTD6P10E

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MTD6P10E

MTD6P10E

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Part No :

MTD6P10E

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 100V 6A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
717171 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
MTD6P10E PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:660mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.75W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
MTD6P10E is available at GangBo-ic.com, Please review product page below for detailed information, including MTD6P10E price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MTD6P10E to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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