MOSFET N-CH 200V 27A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | - |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQPF5N50CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F |
|
2SK3844(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 45A TO220NIS |
|
2N7002TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT23-3 |
|
BUK9875-100A,115NXP Semiconductors |
MOSFET N-CH 100V 7A SOT-223 |
|
FQD3P50TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
|
SPB10N10L GIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A TO263-3 |
|
IRFR13N20DTRLIR (Infineon Technologies) |
MOSFET N-CH 200V 13A DPAK |
|
NTTFS4800NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 5A/32A 8WDFN |
|
STI24NM65NSTMicroelectronics |
MOSFET N-CH 650V 19A I2PAK |
|
AO4476A_103Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SO |
|
SI1426DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.8A SC70-6 |
|
AOL1413Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 38A ULTRASO-8 |
|
ZVN0124ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 160MA E-LINE |